Modelling of Hfe avalanche degradation in gate controlled bipolar transistors
نویسنده
چکیده
2014 The avalanche degradation phenomenon model presented here takes into account both : an increase of surface recombination rate localized near the initial intrinsic point in the junction transition region surface and a displacement of the intrinsic point due to the oxide injected charge. A method for the determination of parameters of the model is presented. The modelling results are given for uniform surface state density increase and for an other distribution. This model is used to improve the design of memory cells devices using this phenomenon. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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